IS25LE01G-RILA3-TY datasheet(164/186 Pages) ISSI

부품명	IS25LE01G-RILA3-TY

상세설명	SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	186 Pages

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164 / 186 page

IS25LE01G

IS25WE01G

Integrated Silicon Solution, Inc.- www.issi.com

164

Rev. A6

01/14/2025

8.63 GANG SECTOR/BLOCK LOCK OPERATION (GBLK, 7Eh)

The Gang Sector/Block Lock (GBLK) instruction provides a quick method to set all DYB (Dynamic Protection Bit)

bits to “0” at once.

Before the GBLK (7Eh) command can be accepted by the device, a Write Enable (WREN) command must be

issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any

write operations.

The sequence of issuing GBLK instruction is: drive CE# low → send GBLK instruction code → drive CE# high.

The instruction code will be shifted into the device on the rising edge of SCK.

The GBLK command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary,

otherwise, the instruction will be ignored. While the GBLK operation is in progress, the Status Register may be read

to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the GBLK operation, and is “0” when

it is completed.

Figure 8.138 Gang Sector/Block Lock Sequence In SPI Mode

Instruction = 7Eh

CE#

SCK

Mode 3

Mode 0

High Impedance

Figure 8.139 Gang Sector/Block Lock Sequence In QPI Mode

7Eh

CE#

SCK

IO[3:0]

Mode 3

Mode 0

IS25LE01G-RILA3-TY 데이터시트(PDF) 164 Page - Integrated Silicon Solution, Inc