| 전자부품 데이터시트 검색엔진 |
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M25P80-VMP6TP 데이터시트(PDF) 41 Page - Numonyx B.V |
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M25P80-VMP6TP 데이터시트(HTML) 41 Page - Numonyx B.V |
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41 / 52 page ![]() M25P80 DC and AC parameters 41/52 tPP (7) Page Program cycle time (256 byte) 0.64 5ms Page Program cycle time (n bytes, where n = 1 to 4) 0.01 Page Program cycle time (n bytes, where n = 5 to 256) int(n/8) × 0.02(8) tSE Sector erase cycle time 0.6 3 s tBE Bulk erase cycle time 8 20 s 1. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12: Part numbering. 2. Typical values given for TA = 25°C. 3. tCH + tCL must be greater than or equal to 1/ fC 4. Value guaranteed by characterization, not 100% tested in production. 5. Expressed as a slew-rate. 6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤256) 8. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16. Table 15. AC characteristics (75 MHz operation, Grade 6) (continued) 75 MHz available only for products made in T9HX technology, identified with Process digit “4”(1) Test conditions specified in Table 10 and Table 12 Symbol Alt. Parameter Min. Typ.(2) Max. Unit |
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