전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

APM32E103CEU6-R 데이터시트(PDF) 38 Page - Geehy Semiconductor Co., Ltd.

부품명 APM32E103CEU6-R
상세설명  Arm® Cortex®-M3 based 32-bit MCU
PDF  79 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  GEEHY [Geehy Semiconductor Co., Ltd.]
홈페이지  https://global.geehy.com/
Logo GEEHY - Geehy Semiconductor Co., Ltd.

APM32E103CEU6-R 데이터시트(HTML) 38 Page - Geehy Semiconductor Co., Ltd.

Back Button APM32E103CEU6-R Datasheet HTML 34Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 35Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 36Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 37Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 38Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 39Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 40Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 41Page - Geehy Semiconductor Co., Ltd. APM32E103CEU6-R Datasheet HTML 42Page - Geehy Semiconductor Co., Ltd. Next Button
Zoom Inzoom in Zoom Outzoom out
 38 / 79 page
background image
www.g eeh y.co m
Pag e 37
(3) Positive injection is not possible on these I/Os. a negative injection is induced by VIN<VSS.
IINJ(PIN) must never be exceeded.
(4) A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS.
IINJ(PIN) must never be exceeded.
(5) When several inputs are submitted to a current injection, the maximum
ΣIINJ(PIN) is the
absolute sum of the positive and negative injected currents (instantaneous values).
5.3.4.
Electrostatic discharge (ESD)
Table 16 ESD Absolute Maximum Ratings
Symbol
Parameter
Conditions
Value
Unit
VESD(HBM)
Electrostatic discharge voltage (human body model)
TA = +25
℃
±
5000
V
Note: The samples are measured by a third-party testing organization and are not tested in production.
5.3.5.
Static latch-up (LU)
Table 17 Static Latch-up
Symbol
Parameter
Conditions
Type
LU
Class of static latch-up
TA = +25
℃/105℃, conforming to EIA/JESD78E
CLASS
Ⅱ A
Note: The samples are measured by a third-party testing organization and are not tested in production.
5.4.
On-chip memory
5.4.1.
Flash characteristics
Table 18 Flash Memory Characteristics
Symbol
Parameter
Conditions
Minimum
value
Typical
value
Maximum
value
Unit
tprog
16-bit programming time
TA = -40~105
℃
VDD=2.4~3.6V
40
46.08
70
μs
tERASE
Page (2KBytes) erase time
TA = -40~105
℃
VDD=2.4~3.6V
10
-
30
ms
tME
Whole erase time
TA = 40~105
℃
VDD=3.3V
10
-
30
ms
Vprog
Programming voltage
TA = -40~105
℃
2
-
3.6
V
tRET
Data saving time
TA=125℃
10.77
-
-
years
NRW
Erase cycle
TA=85°C
100K
-
-
cycles
Note: It is obtained from a comprehensive evaluation and is not tested in production.
5.5.
Clock
5.5.1.
Characteristics of external clock source
5.5.1.1.
High-speed external clock generated by crystal resonator
For detailed parameters (frequency, package, precision, etc.) of crystal resonator, please



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com