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APM32E103CEU6-R 데이터시트(PDF) 49 Page - Geehy Semiconductor Co., Ltd.

부품명 APM32E103CEU6-R
상세설명  Arm® Cortex®-M3 based 32-bit MCU
PDF  79 Pages
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제조업체  GEEHY [Geehy Semiconductor Co., Ltd.]
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Pag e 48
Parameter
Peripheral
Typical value (1) TA =25℃, VDD =3.3V
Unit
ADC3
0.28
TMR1
0.4
TMR8
0.4
SPI1
0.13
USART1
0.2
Note: It is obtained from a comprehensive evaluation and is not tested in production.
5.8.
Wake-up time in low power mode
The measurement of wake-up time in low power mode is from the start of wake-up event to the
time when the user program reads the first instruction, in which VDD=VDDA.
Table 33 Wake Up Time in Low-power Mode
Symbol
Parameter
Conditions
Min
Typical value (TA=25
℃)
Max
Unit
2V
3.3V
3.6V
tWUSLEEP
Wake-up
from sleep
mode
-
0.52
0.61
0.60
0.57
0.65
μs
tWUSTOP
Wake up from
stop mode
The voltage regulator is in run mode
1.83
2.24
1.91
1.86
2.26
The voltage regulator is in low power
mode
2.66
4.18
2.95
2.82
4.61
tWUSTDBY
Wake up from
standby
mode
-
59.56
76.40
63.74
61.29
84.56
Note: It is obtained from a comprehensive evaluation and is not tested in production.
5.9.
Pin characteristics
5.9.1.
I/O pin characteristics
Table 34 DC Characteristics (test condition of VDD=2.7~3.6V, TA=-40~105
℃)
Symbol
Parameter
Conditions
Minimum
value
Typical
value
Maximum
value
Unit
VIL
Low level input voltage
CMOS port
-0.5
-
0.35VDD
V
VIH
High level input voltage
0.65VDD
-
VDD+0.5
VIL
Low level input voltage
TTL port
-0.5
-
0.8
VIH
High level input voltage, Standard
I/O port
2
-
VDD+0.5
High level input voltage, I/O FT port
2
5.5
Vhys
Standard I/O Schmitt trigger voltage
hysteresis
-
200
-
-
mV
I/O FT Schmitt trigger voltage
hysteresis
5%VDD
-
-
mV
Ilkg
Input leakage current
VSS
≤ VIN ≤ VDD
Standard I/O port
-
-
±
1
μA



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