| 전자부품 데이터시트 검색엔진 |
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APM32E103CEU6-R 데이터시트(PDF) 41 Page - Geehy Semiconductor Co., Ltd. |
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APM32E103CEU6-R 데이터시트(HTML) 41 Page - Geehy Semiconductor Co., Ltd. |
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41 / 79 page ![]() www.g eeh y.co m Pag e 40 Symbol Parameter Conditions Minimum value Typical value Maximum value Unit voltage level selection PLS[2:0]=001 (falling edge) 2.16 - 2.19 V PLS[2:0]=001(PVD hysteresis) 110 - 120 mV PLS[2:0]=010 (rising edgeg) 2.37 - 2.40 V PLS[2:0]=010 (falling edge) 2.26 - 2.29 V PLS[2:0]=010(PVD hysteresis) 100 - 110 mV PLS[2:0]=011 (rising edgeg) 2.46 - 2.50 V PLS[2:0]=011 (falling edge) 2.36 - 2.39 V PLS[2:0]=011(PVD hysteresis) 100 - 110 mV PLS[2:0]=100 (rising edgeg) 2.57 - 2.60 V PLS[2:0]=100 (falling edge) 2.45 - 2.49 V PLS[2:0]=100(PVD hysteresis) 110 - 120 mV PLS[2:0]=101 (rising edgeg) 2.66 - 2.70 V PLS[2:0]=101 (falling edge) 2.56 - 2.59 V PLS[2:0]=101(PVD hysteresis) 100 - 110 mV PLS[2:0]=110 (rising edgeg) 2.76 - 2.80 V PLS[2:0]=110 (falling edge) 2.65 - 2.69 V PLS[2:0]=110(PVD hysteresis) 110 - 110 mV PLS[2:0]=111 (rising edgeg) 2.87 - 2.91 V PLS[2:0]=111 (falling edge) 2.75 - 2.79 V PLS[2:0]=111(PVD hysteresis) 110 - 120 mV Note: It is obtained from a comprehensive evaluation and is not tested in production. 5.7. Power consumption Forms containing SDRAM are applicable to APM32E103xCxETxS, otherwise applicable to APM32E103xCxETx. 5.7.1. Power consumption test environment (1) The values are measured by executing Dhrystone 2.1, with the Keil.V5 compilation environment and the L0 compilation optimization level. (2) All I/O pins are in input mode with a static value at VDD or VSS (no load) (3) Unless otherwise specified, all peripherals are turned off (4) The relationship between Flash waiting cycle setting and fHCLK : 0~24MHz: 0 waiting cycle 24~48MHz: 1 waiting cycle 48~72MHz: 2 waiting cycles |
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