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M36DR232 데이터시트(PDF) 24 Page - STMicroelectronics

부품명 M36DR232
상세설명  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36DR232 데이터시트(HTML) 24 Page - STMicroelectronics

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M36D232A, M36DR232B
24/46
Table 24. DC Characteristics
(TA = –40 to 85°C; VDDF =VDDS = 1.65V to 2.2V)
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage
Current
Flash &
SRAM
0V
≤ VIN ≤ VDD
±2
µA
ILO
Output Leakage
Current
Flash &
SRAM
0V
≤ VOUT ≤ VDD
±10
µA
IDDS
VDD Standby
Current
Flash
EF =VDDF ± 0.2V
VDDF =VDD max
15
50
µA
SRAM
E1S
≥ VDDS – 0.2V, E2S ≤ VDDS – 0.2V,
VIN ≥ VDDS – 0.2V
or VIN ≤ VDDS – 0.2V, f=0
10
50
µA
IDDD
Supply Current
(Reset)
Flash
RPF =VSSF ± 0.2V
210
µA
IDD
Supply Current
SRAM
IIO = 0 mA, E1S =VIL, E2S = WS =VIH,
VIN =VIL or VIH,VDDS =VDD max,
cycle time = 1µs
12
mA
IIO = 0 mA, E1S =VIL, E2S = WS =VIH,
VIN =VIL or VIH,VDDS =VDD max,
min cycle time
37
mA
IDDR
Supply Current
(Read)
Flash
EF =VIL,GF = VIH,f =5MHz
10
20
mA
IDDW
Supply Current
(Program)
Flash
Program in progress
10
20
mA
IDDWD
Supply Current
(Dual Bank)
Flash
Program/Erase in progress in one bank
Read in the other bank
20
40
mA
IDDE
Supply Current
(Erase)
Flash
Erase in progress
10
20
mA
IDDES
(1)
Supply Current
(Erase Suspend)
Flash
Erase Suspend in progress
50
µA
IDDWS
(1)
Supply Current
(Program
Suspend)
Flash
Program Suspend in progress
50
µA
IPPS
Program Current
(Standby)
Flash
VPPF ≤ VDDS
0.2
5
µA
VPPF = 12V ± 0.6V
100
400
µA
IPPR
Program Current
(Read)
Flash
VPPF ≤ VDDS
0.2
5
µA
VPPF = 12V ± 0.6V
100
400
µA
IPPW
Program Current
(Program)
Flash
VPPF = 12V ± 0.6V
Program in progress
510
mA
IPPE
Program Current
(Erase)
Flash
VPPF = 12V ± 0.6V
Program in progress
510
mA
VIL
Input Low Voltage
Flash &
SRAM
–0.5
0.4
V
VIH
Input High
Voltage
Flash &
SRAM
1.4
VDD +0.2
V
VOL
Output Low
Voltage
Flash &
SRAM
VDDF =VDDS =VDD min
IOL = 100µA
0.2
V
VOH
Output High
Voltage
Flash &
SRAM
VDDF =VDDS =VDD min
IOH = –100µA
VDD –0.1
V



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