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M36DR232 데이터시트(PDF) 25 Page - STMicroelectronics

부품명 M36DR232
상세설명  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36DR232 데이터시트(HTML) 25 Page - STMicroelectronics

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M36D232A, M36DR232B
Note: 1.
IDDES and IDDWS are specified with device deselected. If device is read while in erase suspend, current draw is sum of IDDES
and
IDDR. If the device is read while in program suspend, current draw is the sum of IDDWS and IDDR.
Table 25. Flash Read AC Characteristics
(TA = –40 to 85°C; VDDF = 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to tELQV -tGLQV after the falling edge of EF without increasing tELQV
VPPL
Program Voltage
(Program or
Erase operations)
Flash
1.65
2.2
V
VPPH
Program Voltage
(Program or
Erase operations)
Flash
11.4
12.6
V
VPPLK
Program Voltage
(Program and
Erase lock-out)
Flash
1
V
Symbol
Alt
Parameter
Test Condition
Flash
Unit
100
120
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next Address
Valid
EF =VIL,GF =VIL
100
120
ns
tAVQV
tACC
Address Valid to Output Valid
(Random)
EF =VIL,GF =VIL
100
120
ns
tAVQV1
tPAGE
Address Valid to Output Valid
(Page)
EF =VIL,GF =VIL
35
45
ns
tAXQX
tOH
Address Transition to Output
Transition
EF =VIL,GF =VIL
00
ns
tEHQX
tOH
Chip Enable High to Output
Transition
GF =VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
GF =VIL
25
35
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
GF =VIL
100
120
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
GF =VIL
00
ns
tGHQX
tOH
Output Enable High to Output
Transition
EF =VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to Output
Hi-Z
EF =VIL
25
35
ns
tGLQV
(2)
tOE
Output Enable Low to Output
Valid
EF =VIL
25
35
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
EF =VIL
00
ns
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit



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