M39832NE datasheet(23/36 Pages) STMICROELECTRONICS

부품명	M39832NE

상세설명	Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory

PDF	36 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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23 / 36 page

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤ VCC

±1

µA

ICC1

(1)

Supply Current (Read Flash)

EE = VIH, EF = VIL, G =

VIH, f = 6MHz

ICC2

Supply Current (Read EEPROM)

EE = VIL, EF = VIH, G =

VIH, f = 6MHz

ICC3

Supply Current (Standby)

EF = EE = VCC

± 0.2V

100

µA

ICC4

Supply Current (Flash Block

Program or Erase)

Byte program, Sector or

Chip Erase in progress

ICC5

Supply Current (EEPROM Write)

During tWC

VIL

Input Low Voltage

–0.5

0.8

VIH

Input High Voltage

0.7 VCC

VCC + 0.3

VOL

Output Low Voltage

IOL = 1.8mA

0.45

VOH

Output High Voltage

IOH = –100

µAVCC –0.4

VID

A9 High Voltage

11.5

12.5

IID

VID Current

A9 = VID

100

µA

VLKO

VCC Minimum for Write, Erase and

Program

1.9

2.3

Note: 1. When reading the Flash block when an EEPROM byte(s) is under a write cycle, the supply current is ICC1 + ICC5.

Table 12. DC Characteristics

(TA = 0 to 70

°C or –40 to 85°C; VCC = 2.7 to 3.6V)

23/36

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