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M39832NE 데이터시트(PDF) 31 Page - STMicroelectronics

부품명 M39832NE
상세설명  Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
PDF  36 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M39832NE 데이터시트(HTML) 31 Page - STMicroelectronics

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background image
Symbol
Parameter
M39832
Unit
-120
-150
Min
Max
Min
Max
tWHQ7V1
(2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
10
µs
tWHQ7V2
(2)
Write Enable High to DQ7 Valid
(Sector Erase, W Controlled)
1.5
30
1.5
30
sec
tEHQ7V1
(2)
Flash Block Enable High to DQ7 Valid
(Program, EF Controlled)
10
10
µs
tEHQ7V2
(2)
Flash Block Enable High to DQ7 Valid
(Sector Erase, EF Controlled)
1.5
30
1.5
30
sec
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
Notes: 1. All other timings are defined in Read AC Characteristics table.
2. tWHQ7V is the Program or Erase time.
Table 16. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70
°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Parameter
M39832
Unit
Min
Typ
Typical after
100k W/E Cycles
Max
Flash array Erase (Preprogrammed)
5
5
sec
Flash array Erase
12
12
sec
Flash array Block Erase
2.4
sec
Parameter Block Erase
2.3
sec
Main Block (32Kb) Erase
2.7
sec
Main Block (64Kb) Erase
3.3
15
sec
Chip Program (Byte)
8
8
sec
Byte Program
10
10
µs
Word Program
20
20
µs
Program/Erase Cycles (per Block)
100,000
cycles
Table 17. Program, Erase Times and Program, Erase Endurance Cycles (Flash Block)
(TA = 0 to 70
°C; VCC = 2.7V to 3.6V)
31/36
M39832



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