AS7341L datasheet(10/65 Pages) AMSOSRAM

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AS7341L

Electrical Characteristics

Datasheet

• PUBLIC

DS000718

• v1-00 • 2020-May-25

│ 9

Electrical Characteristics

All limits are guaranteed. The parameters with Min and Max values are guaranteed with production

tests or SQC (Statistical Quality Control) methods. All voltages with respect to GND/PGND. Device

parameters are guaranteed at VDD=1.8 V and TA=25 °C unless otherwise noted.

Figure 6:

Electrical Characteristics of AS7341L

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Supply voltage

1.7

1.8

2.0

Operating free-air

temperature(1)

-30

°C

Power Consumption

IDD

Supply current(2)

VDD=1.8 V;

TA=25 °C

Active mode(3)

210

300

µA

VDD=1.8 V;

TA=25 °C

Idle mode(4)

µA

VDD=1.8 V;

TA=25 °C

Sleep mode(5)

0.7

µA

Digital Pins

VIH

SCL,SDA input high

voltage

1.26

VIL

SCL,SDA input low

voltage

0.54

VOL

INT, SDA output low

voltage

6 mA sink current

0.4

Input pin capacitance

Ileak

Leakage current into

SCL,SDA,INT pins

-5

µA

GPIO

CLOAD

Maximum capacitive

load GPIO

(1)

While the device is operational across the temperature range, functionality will vary with temperature.

(2)

Supply current values are shown at the VDD pin and do not include current through pin LDR.

(3)

Active state occurs during active integration. (PON = “1”; SP_EN = “1”) If wait is enabled (WEN = “1”), supply current is

lower during the wait period

(4)

Idle state occurs when PON = “1” and all functions are disabled

(5)

Sleep state occurs when PON = “0” and I2C bus is idle. If I2C traffic is active device automatically enters idle mode.

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