R7KA8M2AFDCAM datasheet(223/295 Pages) RENESAS

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Observation

point

200 pF to

600 pF

USB_DP

USB_DM

200 pF to

600 pF

1.5 k



3.6 V

Figure 2.128

Test circuit in low-speed mode

Table 2.88

USBHS full-speed characteristics (USB_DP and USB_DM pin characteristics)

Conditions: USBHS_RREF = 2.2 kΩ ± 1%, USBMCLK = 12/20/24/48 MHz, USBCLK = 48MHz, USB60CLK = 60MHz

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input

characteristics

Input high voltage

VIH

2.0

—

Input low voltage

VIL

—

0.8

—

Differential input sensitivity

VDI

0.2

—

| USB_DP - USB_DM |

Differential common-mode range

VCM

0.8

—

2.5

—

Output

characteristics

Output high voltage

VOH

2.8

—

3.6

IOH = –200 µA

Output low voltage

VOL

0.0

—

0.3

IOL = 2 mA

Cross-over voltage

VCRS

1.3

—

2.0

Figure 2.129

Rise time

tLR

—

Fall time

tLF

—

Rise/fall time ratio

tLR / tLF

—

111.11 %

tFR/ tFF

Output resistance

ZDRV

40.5

—

49.5

Ω

Rs Not used

(PHYSET.REPSEL[1:0] =

01b

and PHYSET. HSEB = 0)

Pull-up and

pull-down

characteristics

DM pull-up resistance in device controller

mode

Rpu

0.900

—

1.575

kΩ

During idle state

1.425

—

3.090

kΩ

During transmission and

reception

USB_DP and USB_DM pull-down

resistance in host controller mode

Rpd

14.25

—

24.80

kΩ

—

USB_DP,

USB_DM

tFF

tFR

90%

10%

90%

VCRS

Figure 2.129

USB_DP and USB_DM output timing in full-speed mode

RA8M2 Datasheet

2. Electrical Characteristics

R01DS0438EJ0130 Rev.1.30

Feb 27, 2026

Page 223 of 295

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