| 전자부품 데이터시트 검색엔진 |
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R7KA8M2AFDCAM 데이터시트(PDF) 224 Page - Renesas Technology Corp |
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R7KA8M2AFDCAM 데이터시트(HTML) 224 Page - Renesas Technology Corp |
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224 / 295 page ![]() Observation point 50 pF 50 pF USB_DP USB_DM Figure 2.130 Test circuit in full-speed mode Table 2.89 USB High Speed Characteristics (USB_DP and USB_DM Pin Characteristics) Conditions: USBHS_RREF = 2.2 kΩ ± 1%, USBMCLK = 12/20/24/48 MHz Parameter Symbol Min Typ Max Unit Test conditions Input characteristics Squelch detect sensitivity VHSSQ 100 — 150 mV Figure 2.131 Disconnect detect sensitivity VHSDSC 525 — 648 mV Figure 2.132 Common mode voltage VHSCM -50 — 500 mV — Output characteristics Idle state VHSOI -10 — 10 mV — Output high level voltage VHSOH 360 — 440 mV — Output low level voltage VHSOL -10 — 10 mV — Chirp J output voltage (difference) VCHIRPJ 700 — 1100 mV — Chirp K output voltage (difference) VCHIRPK -900 — -500 mV — AC characteristics Rise time tHSR 500 — — ps — Fall time tHSF 500 — — ps Figure 2.133 Output resistance ZHSDRV 40.5 — 49.5 Ω — USB_DP, USB_DM VHSSQ Figure 2.131 USB_DP and USB_DM squelch detect sensitivity (high-speed) USB_DP, USB_DM VHSDSC Figure 2.132 USB_DP and USB_DM disconnect detect sensitivity (high-speed) RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 224 of 295 |
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