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AS5130 데이터시트(PDF) 26 Page - ams AG |
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AS5130 데이터시트(HTML) 26 Page - ams AG |
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26 / 41 page ![]() www.austriamicrosystems.com Revision 1.00 26 - 41 AS5130 Data Sheet - D e ta i l e d D e s c r i p t i o n Figure 19. Figure 21 shows the behavior of the wake up signal. The wake up signal will be low for twakeup = 10us. After that, the wake up signal will go to tri-state condition. In case of an angle comparison with a result below the threshold, the signal will remain in tri-state condition. After switching on AVDD, the system needs max. 250us to generate an angle with maximum accuracy. A WAKE signal cannot be expected until the end of this period. WAKE Interface An open drain NMOS structure is used in the WAKE pad. In order to generate a clear output signal level, a pull up resistor is required. The pad can drive 4mA. VDD on (fast) store_ok POR (40us... 150us) LO LO HI HI reset & reset_storage reset digital core only Retrieve values from storage registers WAKE (26 clk periods) Wait (162 clks - 86us ... 95us) Compare mode WAKE_ON Normal mode store_ok ? Copy to Storage Normal mode OTP readout (46bit - 140us ... 400us) true true false false WAKE (20 clk periods) command rst_otp OTP readout (OTP <8> = HI | measured – stored| > threshold αα α |
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