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EMC646SP16K 데이터시트(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EMC646SP16K 데이터시트(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
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9 / 52 page ![]() EMC646SP16K 4Mx16 CellularRAM AD-MUX 9 Preliminary FUNTIONAL DESCRIPTION In general, 64M CellularRAM devices are high-density alternatives to SRAM and Pseudo SRAM products, popular in low-power, portable applications. The 64Mb device contains a 67,108,864-bit DRAM core, organized as 4,194,304 addresses by 16 bits.The device implement a multiplexed address/data bus. This multiplexed configuration supports greater bandwidth through the x16 data bus, yet still reduces the required signal count. The 64M CellularRAM bus interface supports both asynchronous and burst mode transfers. POWER-UP INITIALIZATION 64M CellularRAM products include an on-chip voltage sensor used to launch the power-up initialization process. Initialization will configure the BCR and the RCR with their default settings. VCC and VCCQ must be applied simultaneously. When they reach a stable level at or above 1.7V, the device will require 150 µs to complete its self-initialization process. Until the end of tPU, CE# should track VccQ and remain HIGH. When initialization is complete, the device is ready for normal operation. Figure 2: Power-Up Initialization Timing Vcc VccQ Vcc=1.7V tPU Device Initialization Device ready for normal operation |
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