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EMC646SP16K 데이터시트(PDF) 9 Page - Emerging Memory & Logic Solutions Inc

부품명 EMC646SP16K
상세설명  4Mx16 bit CellularRAM AD-MUX
PDF  52 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

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EMC646SP16K
4Mx16 CellularRAM AD-MUX
9
Preliminary
FUNTIONAL DESCRIPTION
In general, 64M CellularRAM devices are high-density alternatives to SRAM and Pseudo SRAM products, popular in low-power,
portable applications. The 64Mb device contains a 67,108,864-bit DRAM core, organized as 4,194,304 addresses by 16 bits.The device
implement a multiplexed address/data bus. This multiplexed configuration supports greater bandwidth through the x16 data bus, yet still
reduces the required signal count. The 64M CellularRAM bus interface supports both asynchronous and burst mode transfers.
POWER-UP INITIALIZATION
64M CellularRAM products include an on-chip voltage sensor used to launch the power-up initialization process. Initialization will
configure the BCR and the RCR with their default settings. VCC and VCCQ must be applied simultaneously. When they reach a stable
level at or above 1.7V, the device will require 150
µs to complete its self-initialization process. Until the end of tPU, CE# should track
VccQ and remain HIGH. When initialization is complete, the device is ready for normal operation.
Figure 2: Power-Up Initialization Timing
Vcc
VccQ
Vcc=1.7V
tPU
Device Initialization
Device ready for
normal operation



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