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EMC646SP16K 데이터시트(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

부품명 EMC646SP16K
상세설명  4Mx16 bit CellularRAM AD-MUX
PDF  52 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16K 데이터시트(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16K
4Mx16 CellularRAM AD-MUX
2
Preliminary
x16 Burst, Multiplexed Address/Data
FEATURES
- 16-bit multiplexed address/data bus
- Sigle device supports asynchrous and burst operation
- Vcc, VccQ voltages:
1.7V.1.95V VCC
1.7V.1.95V VCCQ
- Random access time: 70ns
- Burst mode READ and WRITE access:
4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
Max clock rate: 104 MHz (tCLK = 9.62ns) , 133MHz(tCLK = 7.5ns)
Burst initial latency: 38.5ns (4 clocks) @ 104 MHz ,
37.5ns(5 clocks) @ 133 MHz
tACLK: 7ns @ 104 MHz , 5.5ns @ 133 MHz
- Low power consumption:
Asynchronous READ: <25mA
Initial access, burst READ:
(38.5ns [4 clocks] @ 104 MHz) <35mA
Continuous burst READ: <30mA
Initial access, burst READ:
(37.5ns [5 clocks] @ 133 MHz) <40mA
Continuous burst READ: <35mA
- Low-power features
On-chip temperature compensated self refresh (TCSR)
Partial array refresh (PAR)
- Operating temperature range:
Wireless -30°C to +85°C
OPTIONS
- Configuration: 64Mb (4 megabit x 16)
- Vcc core / VccQ I/O voltage supply: 1.8V
- Timing: 70ns access
- Frequency: 83 MHz, 104 MHz, 133 MHz
- Standby current at 85°C
Low Low Power : 140
µA(max)
Low Power
: 160
µA(max)
Standard
: 180
µA(max)



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