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EMC646SP16K 데이터시트(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EMC646SP16K 데이터시트(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
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2 / 52 page ![]() EMC646SP16K 4Mx16 CellularRAM AD-MUX 2 Preliminary x16 Burst, Multiplexed Address/Data FEATURES - 16-bit multiplexed address/data bus - Sigle device supports asynchrous and burst operation - Vcc, VccQ voltages: 1.7V.1.95V VCC 1.7V.1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 104 MHz (tCLK = 9.62ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 38.5ns (4 clocks) @ 104 MHz , 37.5ns(5 clocks) @ 133 MHz tACLK: 7ns @ 104 MHz , 5.5ns @ 133 MHz - Low power consumption: Asynchronous READ: <25mA Initial access, burst READ: (38.5ns [4 clocks] @ 104 MHz) <35mA Continuous burst READ: <30mA Initial access, burst READ: (37.5ns [5 clocks] @ 133 MHz) <40mA Continuous burst READ: <35mA - Low-power features On-chip temperature compensated self refresh (TCSR) Partial array refresh (PAR) - Operating temperature range: Wireless -30°C to +85°C OPTIONS - Configuration: 64Mb (4 megabit x 16) - Vcc core / VccQ I/O voltage supply: 1.8V - Timing: 70ns access - Frequency: 83 MHz, 104 MHz, 133 MHz - Standby current at 85°C Low Low Power : 140 µA(max) Low Power : 160 µA(max) Standard : 180 µA(max) |
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