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ESDALC6V1M6 데이터시트(PDF) 3 Page - STMicroelectronics |
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ESDALC6V1M6 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() ESDALC6V1M6, ESDALC6V1-5M6 Characteristics 3/11 Figure 2. Relative variation of peak pulse power versus initial junction temperature Figure 3. Peak pulse power versus exponential pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 P PP [T j init ial] /P PP [T j init ial= 2 5 ] T j(°C) °C 10 100 1000 1 10 100 P PP(W) T j initial = 25°C 10 100 1000 1 10 100 P PP(W) T j initial = 25°C tP(µs) tP(µs) Figure 4. Clamping voltage versus peak pulse current (typical values, 8/20 µs waveform) Figure 5. Forward voltage drop versus peak forward current (typical values) 0.1 1.0 10.0 100.0 0 1020 3040 50 60 70 I PP(A) 8/20µs T j initial =25°C 0.1 1.0 10.0 100.0 0 1020 3040 50 60 70 I PP(A) 8/20µs T j initial =25°C VCL(V) VCL(V) 1.E-03 1.E-02 1.E-01 1.E+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I FM (A) T j =25°C T j =125°C V FM (V) Figure 6. Junction capacitance versus reverse voltage applied (typical values) Figure 7. Relative variation of leakage current versus junction temperature (typical values) C(pF) C(pF) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F=1MHz V OSC=30mVRMS T j=25°C VR(V) VR(V) 1 10 100 25 50 75 100 125 I R [T j ]/ I R [T j =2 5 ] V R =3V °C T j(°C) |
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