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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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M306V2EEFS 데이터시트(PDF) 263 Page - Renesas Technology Corp |
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M306V2EEFS 데이터시트(HTML) 263 Page - Renesas Technology Corp |
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263 / 271 page  Rev.1.40 Oct 06, 2004 page 263 of 269 M306V2ME-XXXFP, M306V2EEFP BCLK CSi td(BCLK–CS) 35ns.max td(BCLK–AD) 35ns.max ALE 35ns.max th(BCLK–ALE) –4ns.min RD 35ns.max th(BCLK–RD) 0ns.min th(BCLK–AD) 4ns.min th(BCLK–CS) 4ns.min Hi–Z DB tSU(DB–RD) 40ns.min th(RD–DB) 0ns.min tcyc 0ns.min th(RD–CS) ADi BHE Read timing 35ns.max th(BCLK–WR) 0ns.min BCLK CSi td(BCLK–CS) 35ns.max td(BCLK–AD) 35ns.max ALE 35ns.max td(BCLK–ALE) th(BCLK–ALE) –4ns.min th(BCLK–AD) 4ns.min th(BCLK–CS) 4ns.min tcyc 0ns.min th(WR–CS) th(WR–AD) ADi BHE td(BCLK–DB) 40ns.max 4ns.min th(BCLK–DB) td(DB–WR) (tcyc–40)ns.min 0ns.min th(WR–DB) DBi Write timing td(BCLK–ALE) td(BCLK–RD) 0ns.min td(BCLK–WR) 0ns.min th(RD–AD) tac2(RD–DB) Memory Expansion Mode and Microprocessor Mode (When accessing external memory area with wait) Measuring conditions • VCC=5V • Input timing voltage : Determined with: VIL=0.8V, VIH=2.5V • Output timing voltage : Determined with: VOL=0.8V, VOH=2.0V WR,WRL, WRH Figure 5.10.4 Timing diagram in memory expansion mode and microprocessor mode (3) |
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