M32CSLASH8B datasheet(316/406 Pages) RENESAS

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M32C/8B Group

23. Flash Memory

Preliminary specification

Specifications in this manual are tentative and subject to change.

REJ09B0450-0050 Rev.0.50 Oct 31, 2008

Page 299 of 385

23. Flash Memory

CPU rewrite mode, standard serial I/O mode, and parallel I/O mode can be used to erase and program the flash

memory.

Table 23.1 lists specifications of the flash memory.

Table 23.1

Flash Memory Specifications

NOTE:

1. The erase and program endurance is the number of erase operations performed on individual blocks. For

example, if the block A is erased without programming, the erased and program count stands at one for the

block A.

Item

Specification

Erase unit

On a block basis (See Figure 23.1)

Program unit

4 bytes

Erase and program endurance

100 times(1)

Erase and program control method

Software commands control erasing and programming on the flash memory

Number of commands

9 commands

Protect function

• Lock bit protect function (All modes)

• ROM code protect function (Parallel I/O mode)

• ID code check function (Standard serial I/O mode)

Flash memory stop function

Flash memory can be stopped and initialized

Flash memory rewrite mode

• CPU rewrite mode

• Standard serial I/O mode

• Parallel I/O mode

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