 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
H8SX/1663M 데이터시트(PDF) 341 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
H8SX/1663M 데이터시트(HTML) 341 Page - Renesas Technology Corp |
|
|
341 / 1504 page  Section 9 Bus Controller (BSC) Rev. 2.00 Sep. 24, 2008 Page 309 of 1468 REJ09B0412-0200 9.11.5 Basic Timing Figures 9.60 and 9.61 show a basic access timing of the SDRAM space. A basic read cycle consists of five clock cycles: one precharge cycle (Tp), one row address output cycle (Tr), and three column address output cycles (Tc1, Tcl, and Tc2). A basic write cycle consists of four clock cycles: one precharge cycle (Tp), one row address output cycle (Tr), and two column address output cycles (Tc1 and Tc2). When the SDRAM space is selected, the WAITE bit in BCR, the RAST and CAST bits in DRAMCR, bits RCW1 and RCW0 in REFCR are ignored. Tp Tr Tc1 Tcl Tc2 Address bus Row address Column address SDRAM φ CS Precharge-sel RAS CAS WE CKE PALL ACTV READ NOP DQMLU DQMLL D7 to D0 BS RD/ WR D15 to D8 Row address Figure 9.60 SDRAM Basic Read Access Timing (CAS Latency = 2) |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
