1

Rectifier Device Data

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features chrome barrier metal,

epitaxial construction with oxide passivation and metal overlap contact. Ideally

suited for use as rectifiers in low–voltage, high–frequency inverters, free

wheeling diodes, and polarity protection diodes.

• Extremely Low vF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C

Max. for 10 Seconds, 1/16

″ from case

• Shipped in plastic bags, 1000 per bag.

• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the

part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: 1N5817, 1N5818, 1N5819

MAXIMUM RATINGS

Rating

Symbol

1N5817

1N5818

1N5819

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

20

30

40

V

Non–Repetitive Peak Reverse Voltage

VRSM

24

36

48

V

RMS Reverse Voltage

VR(RMS)

14

21

28

V

Average Rectified Forward Current (2)

(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,

R

θJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)

IO

1.0

A

Ambient Temperature (Rated VR(dc), PF(AV) = 0, R

θJA = 80°C/W)

TA

85

80

75

°C

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, half–wave, single phase 60 Hz,

TL = 70°C)

IFSM

25 (for one cycle)

A

Operating and Storage Junction Temperature Range (Reverse Voltage applied)

TJ, Tstg

–65 to +125

°C

Peak Operating Junction Temperature (Forward Current applied)

TJ(pk)

150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

80

°C/W

Characteristic

Symbol

1N5817

1N5818

1N5819

Unit

Maximum Instantaneous Forward Voltage (1)

(iF = 0.1 A)

(iF = 1.0 A)

(iF = 3.0 A)

vF

0.32

0.45

0.75

0.33

0.55

0.875

0.34

0.6

0.9

V

Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)

(TL = 25°C)

(TL = 100°C)

IR

1.0

10

1.0

10

1.0

10

mA

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2.0%.

(2) Lead Temperature reference is cathode lead 1/32

″ from case.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 1N5817/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

1N5817

1N5818

1N5819

SCHOTTKY BARRIER

RECTIFIERS

1 AMPERE

20, 30 and 40 VOLTS

CASE 59–04

1N5817 and 1N5819 are

Motorola Preferred Devices

Rev 3