| 전자부품 데이터시트 검색엔진 |
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ADIS16265/PCBZ 데이터시트(PDF) 4 Page - Analog Devices |
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ADIS16265/PCBZ 데이터시트(HTML) 4 Page - Analog Devices |
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4 / 19 page ![]() ADIS16260/ADIS16265 Preliminary Technical Data Rev. PrB | Page 4 of 19 Parameter Conditions Min Typ Max Unit DAC OUTPUT 5 kΩ/100 pF to GND Resolution 12 Bits Relative Accuracy For Code 101 to Code 4095 4 LSB Differential Nonlinearity 1 LSB Offset Error ±5 mV Gain Error ±0.5 % Output Range 0 to 2.5 V Output Impedance 2 Ω Output Settling Time 10 μs LOGIC INPUTS Internal 3.3 V Interface Input High Voltage, VINH 2.0 V Input Low Voltage, VINL 0.8 V For CS signal when used to wake up from sleep mode 0.55 V Logic 1 Input Current, IINH VIH = 3.3 V ±0.2 ±10 μA Logic 0 Input Current, IINL VIL = 0 V All except RST −40 −60 μA RST3 −1 mA Input Capacitance, CIN 10 pF DIGITAL OUTPUTS Internal 3.3 V Interface Output High Voltage, VOH ISOURCE = 1.6 mA 2.4 V Output Low Voltage, VOL ISINK = 1.6 mA 0.4 V SLEEP TIMER Timeout Period4 0.5 128 sec START-UP TIME Initial 160 ms Sleep Mode Recovery 2.5 ms FLASH MEMORY Endurance5 10,000 Cycles Data Retention6 TJ = 55°C 20 Years CONVERSION RATE Minimum Conversion Time 0.488 ms Maximum Conversion Time 7.75 sec Maximum Throughput Rate 2048 SPS Minimum Throughput Rate 0.129 SPS POWER SUPPLY Operating Voltage Range, VCC 4.75 5.0 5.25 V Power Supply Current Normal mode at 25°C TBD mA Fast mode at 25°C TBD mA Sleep mode at 25°C TBD μA 1 ADIS16265 characterization data represents ±4σ to fall within the ±1% limit. 2 The sensor is capable of ±600°/sec, but the specifications herein are for ±320°/sec only. 3 The RST pin has an internal pull-up. 4 Guaranteed by design. 5 Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C. 6 Retention lifetime equivalent at junction temperature (TJ) 55°C, as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature. |
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