| 전자부품 데이터시트 검색엔진 |
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STM32F101XC 데이터시트(PDF) 53 Page - STMicroelectronics |
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STM32F101XC 데이터시트(HTML) 53 Page - STMicroelectronics |
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53 / 106 page ![]() STM32F101xC, STM32F101xD, STM32F101xE Electrical characteristics Doc ID 14610 Rev 7 53/106 Caution: To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended to use a resonator with a load capacitance CL 7 pF. Never use a resonator with a load capacitance of 12.5 pF. Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF, then CL1 = CL2 = 8 pF. Figure 20. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 25 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. High-speed internal (HSI) RC oscillator ai14129b OSC32_OU T OSC32_IN fLSE CL1 RF STM32F10xxx 32.768 KH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 25. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 1(3) 3. Guaranteed by design, not tested in production. % Factory- calibrated(4) 4. Based on characterization, not tested in production. TA = –40 to 105 °C –2 2.5 % TA = –10 to 85 °C –1.5 2.2 % TA = 0 to 70 °C –1.3 2 % TA = 25 °C –1.1 1.8 % tsu(HSI) (4) HSI oscillator startup time 12 µs IDD(HSI) (4) HSI oscillator power consumption 80 100 µA |
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