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MB91F613 데이터시트(PDF) 97 Page - fujitsu semiconductor |
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MB91F613 데이터시트(HTML) 97 Page - fujitsu semiconductor |
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97 / 104 page ![]() MB91610 Series DS07-16907-2E 97 8. Flash Memory Write/Erase Characteristics (VCC = 3.3 V, Ta = + 25 °C) *1 : The chip erase time is the sector erase time multiplied across all sectors. *2 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into normalized value at + 85 °C) . Parameter Value Unit Remarks Min Typ Max Sector erase time ⎯ 0.9 3.6 s Excludes write time prior to internal erase Half word (16bits) write time ⎯ 23 370 μs Not including system-level overhead time. Chip erase time*1 ⎯ 10.8 43.2 s Excludes write time prior to internal erase Erase/write cycles 10000 ⎯⎯ cycle Average Ta ≤ + 85 °C Flash memory data hold time 10*2 ⎯⎯ year Average Ta ≤ + 85 °C |
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