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AT45DB321D-CU 데이터시트(PDF) 4 Page - ATMEL Corporation |
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AT45DB321D-CU 데이터시트(HTML) 4 Page - ATMEL Corporation |
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4 / 57 page ![]() 4 3597N–DFLASH–04/09 AT45DB321D 3. Block Diagram 4. Memory Array To provide optimal flexibility, the memory array of the AT45DB321D is divided into three levels of granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page by page basis. The erase operations can be performed at the chip, sector, block or page level. Figure 4-1. Memory Architecture Diagram FLASH MEMORY ARRAY PAGE (512/528 BYTES) BUFFER 2 (512/528 BYTES) BUFFER 1 (512/528 BYTES) I/O INTERFACE SCK CS RESET VCC GND RDY/BUSY WP SO SI SECTOR 0a = 8 Pages 4,096/4,224 bytes SECTOR 0b = 120 Pages 61,440/63,360 bytes Block = 4,096/4,224 bytes 8 Pages SECTOR 0a Page = 512/528 bytes PAGE 0 PAGE 1 PAGE 6 PAGE 7 PAGE 8 PAGE 9 PAGE 8,190 PAGE 8,191 PAGE 14 PAGE 15 PAGE 16 PAGE 17 PAGE 18 SECTOR ARCHITECTURE BLOCK ARCHITECTURE PAGE ARCHITECTURE BLOCK 0 BLOCK 1 BLOCK 62 BLOCK 63 BLOCK 64 BLOCK 65 BLOCK 1,022 BLOCK 1,023 BLOCK 126 BLOCK 127 BLOCK 128 BLOCK 129 SECTOR 63 = 128 Pages 65,536/67,586 bytes BLOCK 2 SECTOR 1 = 128 Pages 65,536/67,584 bytes SECTOR 62 = 128 Pages 65,536/67,584 bytes SECTOR 2 = 128 Pages 65,536/67,584 bytes |
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