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MPC5125 데이터시트(PDF) 41 Page - Freescale Semiconductor, Inc |
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MPC5125 데이터시트(HTML) 41 Page - Freescale Semiconductor, Inc |
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41 / 92 page ![]() Electrical and Thermal Characteristics MPC5125 Microcontroller Data Sheet, Rev. 3 Freescale Semiconductor 41 4.1.5 Power Dissipation Power dissipation of the MPC5125 is caused by three different components: • Dissipation of the internal or core digital logic (supplied by VDD) • Dissipation of the analog circuitry (supplied by AVDD_SPLL and AVDD_CPLL) • Dissipation of the IO logic (supplied by VDD_IO_MEM and VDD_IO) Table 10 details typical measured core and analog power dissipation figures for a range of operating modes. However, the dissipation due to the switching of the IO pins cannot be given in general, but must be calculated for each application case using the following formula: Eqn. 1 where N is the number of output pins switching in a group M, C is the capacitance per pin, VDD_IO is the IO voltage swing, f is the switching frequency, and PIOint is the power consumed by the unloaded IO stage. The total power consumption of the MPC5125 device must not exceed this value, which would cause the maximum junction temperature to be exceeded. Eqn. 2 Table 10. Power Dissipation Core Power Supply (VDD_core) 1 NOTES: 1 Typical core power is measured at V DD_core = 1.4 V, TJ = 25 °C. Mode High-Performance Unit SpecID e300 = 400 MHz, CSB = 200 MHz Operational2 2 Operational power is measured while running an entirely cache-resident program with floating-point multiplication instructions in parallel with DDR write operation. 620 mW D5.1 Doze3 580 mW D5.3 Nap3 235 mW D5.2 Sleep3 230 mW D5.4 Deep-sleep4 38 mW D5.5 RTC Power Supply (VBAT) Hibernation 20 µW D5.6 PLL/OSC Power Supplies (AVDD_SPLL, AVDD_CPLL, AVDD_OSC_TMPS) 5 Operational 18 mW D5.7 Deep-sleep 55 µW D5.8 Unloaded I/O Power Supplies (VDD_IO, VDD_IO_MEM) 6 VDD_IO VDD_IO_MEM Operational 180 40 mW D5.9 Deep-sleep 5 1 mW D5.10 P IO P IOint N M ∑ + CVDD_IO 2 f × × × = P total P core P analog P IO ++ = |
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