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PC912XDP512F0MPVR 데이터시트(PDF) 1050 Page - Freescale Semiconductor, Inc |
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PC912XDP512F0MPVR 데이터시트(HTML) 1050 Page - Freescale Semiconductor, Inc |
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1050 / 1348 page ![]() Chapter 25 2 Kbyte EEPROM Module (S12XEETX2KV1) MC9S12XDP512 Data Sheet, Rev. 2.21 1052 Freescale Semiconductor then 182 kHz. In this case, the EEPROM program and erase algorithm timings are increased over the optimum target by: CAUTION Program and erase command execution time will increase proportionally with the period of EECLK. Because of the impact of clock synchronization on the accuracy of the functional timings, programming or erasing the EEPROM memory cannot be performed if the bus clock runs at less than 1 MHz. Programming or erasing the EEPROM memory with EECLK < 150 kHz should be avoided. Setting ECLKDIV to a value such that EECLK < 150 kHz can destroy the EEPROM memory due to overstress. Setting ECLKDIV to a value such that (1/EECLK+Tbus) < 5 µs can result in incomplete programming or erasure of the EEPROM memory cells. If the ECLKDIV register is written, the EDIVLD bit is set automatically. If the EDIVLD bit is 0, the ECLKDIV register has not been written since the last reset. If the ECLKDIV register has not been written to, the EEPROM command loaded during a command write sequence will not execute and the ACCERR flag in the ESTAT register will set. 200 182 – () 200 ⁄ 100 × 9% = |
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