RE46C190 datasheet(24/42 Pages) MICROCHIP

24 / 42 page

RE46C190

DS22271A-page 24

 2010 Microchip Technology Inc.

4.4

Serial Read/Write

As an alternative to the steps in Section 4.3 “Smoke

Calibration”

the

system

has

been

well

characterized, the limits and baseline can be entered

directly from a serial read/write calibration mode.

To enter this mode, follow these steps:

Set up the application as shown in Figure 4-1.

Drive TEST2 input from VSS to VDD to enter in

Programming mode. TEST2 should remain at

VDD until all data has been entered.

Clock the TEST input to mode T6 (High = VBST,

Low = VSS, 6 clocks). This enables the serial

read/write mode.

TEST now acts as a data input (High = VDD,

Low = VSS). FEED acts as the clock input

(High = VBST, Low = VSS). Clock in the limits,

LTD

baseline, functional

and parametric

options. The data sequence should be as

follows:

Then, the data sequence follows the pattern described

in Register 4-1:

A serial data output is available at HB.

After all 39 bits have been entered, pulse IO to

store into the EEPROM memory.

FIGURE 4-5:

Timing Diagram for Mode T6.

5 bit

LTD sample (LSB first)

5 bit

Chamber Test Limits (LSB first)

5 bit

Hush Limits (LSB first)

5 bit

Hysteresis Limits (LSB first),

5 bit

Normal Limits (LSB first)

2 bit

Photo Amp Gain Factor

2 bit

Integration Time

2 bit

IRED current

3 bit

Low Battery Trip Point

1 bit

Long Term Drift Enable

1 bit

Hush Option

1 bit

Low Battery Hush Enable

1 bit

EOL enable

1 bit

Tone Select

VDD

TEST2

VSS

VBST

TEST

D10

D11

D12

D13

D14

D15

…

D39

VSS

Min Tsetup2 = 2 µs

Min PW3 = 100 µs

Min T2 = 120 µs

VBST

FEED

…

VSS

Min Tsetup1 = 1 µs

Min Thold1 = 1 µs

Min PW1 = 10 µs

Min T1 = 20 µs

VDD

…

VSS

Min PW2 = 10 ms

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