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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ZXMN6A09DN8 데이터시트(PDF) 1 Page - Diodes Incorporated |
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ZXMN6A09DN8 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 8 page  Issue 6 - January 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOIC package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device marking ZXMN 6A09D V(BR)DSS RDS(on) ( ) ID (A) 60 0.040 @ VGS= 10V 5.6 0.060 @ VGS= 4.5V 4.6 Device Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A09DN8TA 7 12 500 D2 S2 G2 D1 S1 G1 D1 S1 G1 S2 G2 Top view D1 D2 D2 |
유사한 부품 번호 - ZXMN6A09DN8 |
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유사한 설명 - ZXMN6A09DN8 |
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