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ZXMN6A09DN8 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 ZXMN6A09DN8
상세설명  60V SO8 N-channel enhancement mode MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN6A09DN8 데이터시트(HTML) 2 Page - Diodes Incorporated

  ZXMN6A09DN8 Datasheet HTML 1Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 2Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 3Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 4Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 5Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 6Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 7Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 8Page - Diodes Incorporated  
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ZXMN6A09DN8
Issue 6 - January 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGS
±20
V
Continuous drain current
@ VGS=10V; Tamb=25°C(b)
ID
5.6
A
@ VGS=10V; Tamb=70°C(b)
4.5
@ VGS=10V; Tamb=25°C(a)
4.3
Pulsed drain current(c)
IDM
27
A
Continuous source current (body diode)(b)
IS
3.5
A
Pulsed source current (body diode)(c)
ISM
27
A
Power dissipation at Tamb = 25°C(a)(d)
PD
1.25
W
Linear derating factor
10
mW/°C
Power dissipation at Tamb = 25°C(b)(e)
PD
1.8
W
Linear derating factor
14
mW/°C
Power dissipation at Tamb = 25°C(b)(d)
PD
2.1
W
Linear derating factor
17
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)(d)
R JA
100
°C/W
Junction to ambient(a)(e)
R JA
70
°C/W
Junction to ambient(b)(d)
R JA
60
°C/W



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