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ZXMN6A09DN8 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMN6A09DN8
상세설명  60V SO8 N-channel enhancement mode MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN6A09DN8 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMN6A09DN8
Issue 6 - January 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V(BR)DSS
60
V
ID= 250 A, VGS=0V
Zero gate voltage drain current
IDSS
1
AVDS= 60V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
1.0
3.0
V
ID= 250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
RDS(on)
0.040
VGS= 10V, ID= 8.2A
0.060
VGS= 4.5V, ID = 7.4A
Forward transconductance(*)(‡)
gfs
15
S
VDS= 15V, ID= 8.2A
Dynamic(‡)
Input capacitance
Ciss
1407
pF
VDS= 40V, VGS=0V
f=1MHz
Output capacitance
Coss
121
pF
Reverse transfer capacitance
Crss
59
pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
td(on)
4.9
ns
VDD= 15V, ID= 3.5A
RG≅6.0 , VGS= 10V
Rise time
tr
5.0
ns
Turn-off delay time
td(off)
25.3
ns
Fall time
tf
4.6
ns
Total gate charge
Qg
12.4
nC
VDS= 15V, VGS= 5V
ID= 3.5A
Total gate charge
Qg
24.2
nC
VDS= 15V, VGS= 5V
ID= 3.5A
Gate-source charge
Qgs
5.2
nC
Gate drain charge
Qgd
3.5
nC
Source-drain diode
Diode forward voltage(*)
VSD
0.85
0.95
V
Tj=25°C, IS= 6.6A,
V
GS=0V
Reverse recovery time(‡)
trr
26.3
ns
Tj=25°C, IS= 3.5A,
di/dt=100A/ s
Reverse recovery charge(‡)
Qrr
26.6
nC



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