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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MPC5673K 데이터시트(PDF) 87 Page - Freescale Semiconductor, Inc |
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MPC5673K 데이터시트(HTML) 87 Page - Freescale Semiconductor, Inc |
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87 / 140 page  Electrical characteristics MPC5675K Microcontroller Data Sheet, Rev. 4 Preliminary—Subject to Change Without Notice Freescale Semiconductor 87 3.15 Flash memory electrical characteristics 3.15.1 Program/Erase characteristics Table 25 shows the Code flash memory program and erase characteristics. Table 26 shows the Data flash memory program and erase characteristics. Table 25. Code flash program and erase electrical specifications No. Symbol Parameter Min Typ1 NOTES: 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial Max2 2 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ = 25 °C. These values are verified at production test. Lifetime Max3 3 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM CC Double Word (64 bits) program time4 4 Actual hardware programming times. This does not include software overhead. — 18 50 500 µs 3T16KPPERASE CC 16 KB block pre-program and erase time — 200 500 5000 ms 4T32KPPERASE CC 32 KB block pre-program and erase time — 300 600 5000 ms 5T64KPPERASE CC 64 KB block pre-program and erase time — 400 900 5000 ms 6T128KPPERASE CC 128 KB block pre-program and erase time — 600 1300 7500 ms Table 26. Data flash program and erase electrical specifications No. Symbol Parameter Min Typ1 NOTES: 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial Max2 2 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ = 25 °C. These values are verified at production test. Lifetime Max3 3 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM CC Double Word (64 bits) program time4 4 Actual hardware programming times. This does not include software overhead. — 30 70 300 µs 3T16KPPERASE CC 16 KB block pre-program and erase time — 700 800 1500 ms |
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