| 전자부품 데이터시트 검색엔진 |
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ACT5830 데이터시트(PDF) 8 Page - Active-Semi, Inc |
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ACT5830 데이터시트(HTML) 8 Page - Active-Semi, Inc |
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8 / 41 page ![]() SYSTEM MANAGEMENT ACT5830 Rev 2, 20-Jan-11 Innovative Power TM - 8 - www.active-semi.com Copyright © 2010 Active-Semi, Inc. ActivePMU TM is a trademark of Active-Semi. I 2CTM is a trademark of NXP. ® ELECTRICAL CHARACTERISTICS (VBAT = VIN1 = VIN2 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BAT Operating Voltage Range 2.6 5.5 V BAT UVLO Threshold BAT Voltage Rising 2.2 2.35 2.5 V BAT UVLO Hysteresis BAT Voltage Falling 80 mV BAT UVLO Delay BAT Rising 0.1 ms BAT Falling 5 nRST Delay 65 ms REG, LDO1, LDO2 and LDO3 Enabled with No Load and CHGR Disabled 0.26 0.5 mA REG, All LDOs Enabled and CHGR Disabled. 0.45 0.75 mA REF Output Voltage 1.24 1.25 1.26 V Reference PSRR CREF = 0.01µF, f = 1kHz 75 dB ODx Output On Resistance 100mA Sink Current 4 Ω ODx Output Leakage Current VODx = VBAT 10 µA Logic High Input Voltage 1.4 V Logic Low Input Voltage 0.4 V Logic Low Output Voltage nON, nRST, ISINK = 5mA 0.3 V Logic Leakage Current VnON = VnRST = VCHG_IN = 4.2V 1 µA Thermal Shutdown Temperature Temperature rising 160 °C Thermal Shutdown Hysteresis Temperature falling 20 °C No Load BAT Supply Current |
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