| 전자부품 데이터시트 검색엔진 |
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TLE4269GL 데이터시트(PDF) 10 Page - Siemens Semiconductor Group |
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TLE4269GL 데이터시트(HTML) 10 Page - Siemens Semiconductor Group |
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10 / 19 page ![]() TLE 4269 Semiconductor Group 10 1998-11-01 Characteristics (cont’d) V I = 13.5 V; Tj = – 40 °C< Tj < 125 °C Parameter Symbol Limit Values Unit Measuring Condition min. typ. max. Delay time L → H t d 17 28 –ms C D =100 nF Delay time H → L t t –1 – µs C D =100 nF Switching voltage V re 1.26 1.35 1.44 V V Q >3.5 V Input Voltage Sense Sense threshold high V si, high 1.24 1.31 1.38 V – Sense threshold low V si, low 1.16 1.20 1.28 V – Sense output low voltage V SO, low –0.1 0.4 V V SI <1.20 V; V i >3V R intern Sense pull up – 10 20 40 k Ω – Sense input current I SI – 10.1 1 µA – |
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