Si87xx

Preliminary Rev. 0.5

11

Table 9. Absolute Maximum Ratings*

Parameter

Symbol

Min

Max

Unit

Storage Temperature

–65

+150

°C

Operating Temperature

–40

+125

°C

Junction Temperature

—+140

°C

Average Forward Input Current

Si87xxA Devices

Si87xxB Devices

Si87xxC Devices

—

—

—

15

30

15

mA

mA

mA

Peak Transient Input Current

(< 1 µs pulse width, 300 ps)

—1

A

Reverse Input Voltage

–0.3

V

Supply Voltage

–0.5

36

V

Output Voltage

–0.5

36

V

Enable Voltage

–0.5

V

Output Sink Current

—15

mA

Average Output Current

—8

mA

—75

mA

Input Power Dissipation

—90

mW

Output Power Dissipation

—50

mW

Total Power Dissipation

—140

mW

Lead Solder Temperature (10 s)

—

260

°C

HBM Rating ESD

3

—

kV

Machine Model ESD

200

—

V

CDM

500

—

V

Maximum Isolation Voltage (1 s) SOIC-8

—

4500

Maximum Isolation Voltage (1 s) DIP8

—

4500

Maximum Isolation Voltage (1 s) SDIP6

—

6500

Maximum Isolation Voltage (1 s) LGA8

—

6500

*Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions specified in the operational sections of this data sheet.