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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST10F276E 데이터시트(PDF) 178 Page - STMicroelectronics |
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ST10F276E 데이터시트(HTML) 178 Page - STMicroelectronics |
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178 / 235 page  Electrical characteristics ST10F276E 178/235 Doc ID 12303 Rev 3 23 Electrical characteristics 23.1 Absolute maximum ratings Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During overload conditions (VIN > VDD or VIN < VSS) the voltage on pins with respect to ground (VSS) must not exceed the values defined by the Absolute Maximum Ratings. During Power-on and Power-off transients (including Stand-by entering/exiting phases), the relationships between voltages applied to the device and the main VDD must always be respected. In particular, power-on and power-off of VAREF must be coherent with the VDD transient, in order to avoid undesired current injection through the on-chip protection diodes. 23.2 Recommended operating conditions Table 86. Absolute maximum ratings Symbol Parameter Value Unit VDD Voltage on VDD pins with respect to ground (VSS) - 0.3 to +6.5 V VSTBY Voltage on VSTBY pin with respect to ground (VSS) VAREF Voltage on VAREF pin with respect to ground (VSS) - 0.3 to VDD + 0.3 VAGND Voltage on VAGND pin with respect to ground (VSS)VSS VIO Voltage on any pin with respect to ground (VSS) - 0.5 to VDD + 0.5 IOV Input current on any pin during overload condition ± 10 mA ITOV Absolute sum of all input currents during overload condition | 75 | TST Storage temperature - 65 to +150 °C ESD ESD susceptibility (human body model) 2000 V Table 87. Recommended operating conditions Symbol Parameter Min. Max. Unit VDD Operating supply voltage 4.5 5.5 V VSTBY Operating stand-by supply voltage(1) VAREF Operating analog reference voltage(2) 0 VDD TA Ambient temperature under bias -40 +125 °C TJ Junction temperature under bias +150 |
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