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ST10F276E 데이터시트(PDF) 38 Page - STMicroelectronics |
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ST10F276E 데이터시트(HTML) 38 Page - STMicroelectronics |
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38 / 235 page ![]() Internal Flash memory ST10F276E 38/235 Doc ID 12303 Rev 3 4.4.3 Flash non-volatile write protection X register high 4.4.4 Flash non-volatile write protection I register low 4.4.5 Flash non-volatile write protection I register high FNVWPXRH (0x0E DF B2) NVR Delivery value: FFFFh 15 14 13 12 11 10 98 765 43 210 Reserved W3P1W3P0 RW RW Table 20. Flash non-volatile write protection X register high Bit Function W3P(1:0) Write Protection Bank 3 / Sectors 1-0 (XFLASH) These bits, if programmed at 0, disable any write access to the sectors of Bank 3 (XFLASH). FNVWPIRL (0x0E DFB4) NVR Delivery value: FFFFh 15 14 13 12 11 10 98 765 43 210 Reserved W0P9W0P8W0P7 W0P6W0P5W0P4W0P3W0P2 W0P1W0P0 RW RW RW RW RW RW RW RW RW RW Table 21. Flash non-volatile write protection I register low Bit Function W0P(9:0) Write Protection Bank 0 / Sectors 9-0 (IFLASH) These bits, if programmed at 0, disable any write access to the sectors of Bank 0 (IFLASH). FNVWPIRH (0x0E DFB6) NVR Delivery value: FFFFh 15 14 13 12 11 10 98 765 43 210 Reserved W1P1W1P0 RW RW Table 22. Flash non-volatile write protection I register high Bit Function W1P(1:0) Write Protection Bank 1 / Sectors 1-0 (IFLASH) These bits, if programmed at 0, disable any write access to the sectors of Bank 1 (IFLASH). |
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