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ST10F276E 데이터시트(PDF) 41 Page - STMicroelectronics |
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ST10F276E 데이터시트(HTML) 41 Page - STMicroelectronics |
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41 / 235 page ![]() ST10F276E Internal Flash memory Doc ID 12303 Rev 3 41/235 4.4.10 Write protection The Flash modules have one level of Write Protections: each sector of each bank of each Flash Module can be Software Write Protected by programming at 0 the related bit WyPx of FNVWPXRH/L-FNVWPIRH/L registers. 4.4.11 Temporary unprotection Bits WyPx of FNVWPXRH/L-FNVWPIRH/L can be temporary unprotected by executing the Set Protection operation and writing 1 into these bits. Bit ACCP can be temporary unprotected by executing the Set Protection operation and writing 1 into these bits, but only if these write instructions are executed from the Flash Modules. To restore the write and access protection bits it is necessary to reset the microcontroller or to execute a Set Protection operation and write 0 into the desired bits. It is not necessary to temporary unprotect an access protected Flash in order to update the code: it is, in fact, sufficient to execute the updating instructions from another Flash bank. In reality, when a temporary unprotection operation is executed, the corresponding volatile register is written to 1, while the non-volatile registers bits previously written to 0 (for a protection set operation), will continue to maintain the 0. For this reason, the User software must be in charge to track the current protection status (for instance using a specific RAM area), it is not possible to deduce it by reading the non-volatile register content (a temporary unprotection cannot be detected). Fetching from XRAM No / Yes Yes / Yes Yes No Fetching from External Memory No / Yes Yes / Yes Yes No Table 26. Summary of access protection level (continued) Memory fetch source Read IFLASH/ Jump to IFLASH Read XFLASH/ Jump to XFLASH Read FLASH Registers Write FLASH Registers |
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