ST10F276E datasheet(205/235 Pages) STMICROELECTRONICS

205 / 235 page

ST10F276E

Electrical characteristics

Doc ID 12303 Rev 3

205/235

Figure 54.

Crystal oscillator and resonator connection diagram

The given values of CA do not include the stray capacitance of the package and of the

printed circuit board: The negative resistance values are calculated assuming additional 5pF

to the values in the table. The crystal shunt capacitance (C0), the package and the stray

capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF.

The external resistance between XTAL1 and XTAL2 is not necessary, since already present

on the silicon.

23.8.14

32 kHz oscillator specifications

Conditions: VDD = 5V ±10%, TA = -40 / +125°C

Table 99.

Negative resistance (absolute min. value @125oC / VDD = 4.5V)

CA (pF)

4 MHz

460

550

675

800

840

1000

1180

1200

8 MHz

380

460

540

640

580

---

12 MHz

370

420

360

-----

Table 100. 32 kHz Oscillator specifications

Symbol

Parameter

Conditions

Value

Unit

Min.

Typ.

Max.

gm32

Oscillator(1)

At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,

the current biasing is reduced to lower the power consumption of the system.

Start-up

µA/V

Normal run

VOSC32

Oscillation amplitude(2))

Peak to peak

0.5

1.0

2.4

VAV32

Oscillation-voltage level(2)

Sine wave middle

0.7

0.9

1.2

tSTUP32

Oscillator start-up time(2)

Stable VDD

-1

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