ADG5436 datasheet(5/20 Pages) AD

5 / 20 page

ADG5436

Rev. A | Page 5 of 20

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

Insertion Loss

−0.6

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 30

CS (Off )

pF typ

VS = 0 V, f = 1 MHz

CD (Off )

pF typ

VS = 0 V, f = 1 MHz

CD (On), CS (On)

pF typ

VS = 0 V, f = 1 MHz

POWER REQUIREMENTS

VDD = +22 V, VSS = −22 V

IDD

μA typ

Digital inputs = 0 V or VDD

110

μA max

ISS

0.001

μA typ

Digital inputs = 0 V or VDD

μA max

VDD/VSS

±9/±22

V min/V max

GND = 0 V

1 Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

On Resistance, RON

Ω typ

VS = 0 V to 10 V, IS = −10 mA; see

Figure 25

Ω max

VDD = 10.8 V, VSS = 0 V

On-Resistance Match

Between Channels, ∆RON

0.4

Ω typ

VS = 0 V to 10 V, IS = −10 mA

0.8

1.2

Ω max

On-Resistance Flatness, RFLAT (ON)

4.4

Ω typ

VS = 0 V to 10 V, IS = −10 mA

5.5

6.5

7.5

Ω max

LEAKAGE CURRENTS

VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off )

±0.05

nA typ

VS = 1 V/10 V, VD = 10 V/1 V;

see Figure 28

±0.25

±0.75

±3.5

nA max

Drain Off Leakage, ID (Off )

±0.1

nA typ

VS = 1 V/10 V, VD = 10 V/1 V;

see Figure 28

±0.4

±2

±12

nA max

Channel On Leakage, ID (On), IS (On)

±0.1

nA typ

VS = VD = 1 V/10 V; see Figure 24

±0.4

±2

±12

nA max

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current, IINL or IINH

0.002

μA typ

VIN = VGND or VDD

±0.1

μA max

Digital Input Capacitance, CIN

pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, tTRANSITION

250

ns typ

RL = 300 Ω, CL = 35 pF

346

437

501

ns max

VS = 8 V; see Figure 31

tON

250

ns typ

RL = 300 Ω, CL = 35 pF

358

445

512

ns max

VS = 8 V; see Figure 33

tOFF

135

ns typ

RL = 300 Ω, CL = 35 pF

178

212

237

ns max

VS = 8 V; see Figure 33

Break-Before-Make Time Delay, tD

125

ns typ

RL = 300 Ω, CL = 35 pF

ns min

VS1 = VS2 = 8 V; see Figure 32

Charge Injection, QINJ

pC typ

VS = 6 V, RS = 0 Ω, CL = 1 nF; see

Figure 34

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