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ADG5436 데이터시트(PDF) 6 Page - Analog Devices

부품명 ADG5436
상세설명  High Voltage Latch-Up Proof, Dual SPDT Switches
PDF  20 Pages
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제조업체  AD [Analog Devices]
홈페이지  http://www.analog.com
Logo AD - Analog Devices

ADG5436 데이터시트(HTML) 6 Page - Analog Devices

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ADG5436
Rev. A | Page 6 of 20
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
Off Isolation
−78
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 27
Channel-to-Channel Crosstalk
−58
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 26
Total Harmonic Distortion + Noise
0.075
% typ
RL = 1 kΩ, 6 V p-p, f = 20 Hz to 20 kHz;
see Figure 29
−3 dB Bandwidth
106
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 30
Insertion Loss
−1.3
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 30
CS (Off )
22
pF typ
VS = 6 V, f = 1 MHz
CD (Off )
67
pF typ
VS = 6 V, f = 1 MHz
CD (On), CS (On)
85
pF typ
VS = 6 V, f = 1 MHz
POWER REQUIREMENTS
VDD = 13.2 V
IDD
40
μA typ
Digital inputs = 0 V or VDD
50
65
μA max
VDD
9/40
V min/V max
GND = 0 V, VSS = 0 V
1 Guaranteed by design; not subject to production test.
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance, RON
10.6
Ω typ
VS = 0 V to 30 V, IS = −10 mA;
see Figure 25
12
15
17
Ω max
VDD = 32.4 V, VSS = 0 V
On-Resistance Match
Between Channels, ∆RON
0.35
Ω typ
VS = 0 V to 30 V, IS = −10 mA
0.7
0.9
1.1
Ω max
On-Resistance Flatness, RFLAT(ON)
2.7
Ω typ
VS = 0 V to 30 V, IS = −10 mA
3.2
3.8
4.5
Ω max
LEAKAGE CURRENTS
VDD = 39.6 V, VSS = 0 V
Source Off Leakage, IS (Off )
±0.05
nA typ
VS = 1 V/30 V, VD = 30 V/1 V;
see Figure 28
±0.25
±0.75
±3.5
nA max
Drain Off Leakage, ID (Off )
±0.1
nA typ
VS = 1 V/30 V, VD = 30 V/1 V;
see Figure 28
±0.4
±2
±12
nA max
Channel On Leakage, ID (On), IS (On)
±0.1
nA typ
VS = VD = 1 V/30 V; see Figure 24
±0.4
±2
±12
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.002
μA typ
VIN = VGND or VDD
±0.1
μA max
Digital Input Capacitance, CIN
5
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
174
ns typ
RL = 300 Ω, CL = 35 pF
246
270
303
ns max
VS = 18 V; see Figure 31
tON
180
ns typ
RL = 300 Ω, CL = 35 pF
247
270
301
ns max
VS = 18 V; see Figure 33



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