6

RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

TYPICAL CHARACTERISTICS — 860 MHz

Case Temperature

3.3

0

10

2.1

2.3

2.2

Figure 5. Drain Current versus Gate--Source Voltage

2.4

9

4

Note: Measured with both sides of the transistor tied together.

1.06

1.05

1.04

1.02

1.01

1.03

1

0.99

0.98

0.97

0.96

0.95

0.94

100

--50

0

--25

25

50

75

1400 mA

1900 mA

2400 mA

8

7

6

5

2

3

1

2.6

2.5

2.7

2.9

2.8

3

3.1 3.2

40 Vdc

30 Vdc

20 Vdc

10 Vdc

50

1

1000

020

10

Figure 6. Capacitance versus Drain--Source Voltage

30

100

10

40

Measured with ±30 mV(rms)ac @ 1 MHz

Note: Each side of device measured separately.

50

64

32

62

Figure 7. Pulsed CW Output Power versus

Input Power

60

43

58

36

37

38

39

40

41

42

P3dB = 59.0 dBm (794 W)

Actual

Ideal

P2dB = 58.8 dBm (759 W)

Pulse Width = 100 μsec, Duty Cycle = 10%

56

54

34

35

33

P1dB = 58.4 dBm (692 W)

52

Figure 8. Pulsed Power Gain and Drain Efficiency

versus Output Power

16

22

10

19

21

20

100

1000

18

17

f = 860 MHz

Pulse Width = 100 μsec

Duty Cycle = 10%

0

60

50

20

40

30

10