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27291SL 데이터시트(PDF) 19 Page - Freescale Semiconductor, Inc

부품명 27291SL
상세설명  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

27291SL 데이터시트(HTML) 19 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents to aid your design process.
Application Notes
• AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2011
• Initial Release of Data Sheet
1
Sept. 2011
• Added Fig. 19, DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power --
470--860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems, p. 13



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