MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

1

RF Device Data

Freescale Semiconductor

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

Optimized for broadband operation from 470 to 860 MHz. Device has an

integrated input matching network for better power distribution. These devices

are ideally suited for use in analog or digital television transmitters.

Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @

±4 MHz Offset with an Integration Bandwidth of 4 kHz.

Signal Type

(W)

f

(MHz)

(dB)

(%)

ACPR

(dBc)

IRL

(dB)

DVB--T (8k OFDM)

125 Avg.

860

19.3

30.0

--60.5

--12

Pulsed Width = 100 μsec, Duty Cycle = 10%

Signal Type

(W)

f

(MHz)

(dB)

(%)

Pulsed

600 Peak

470

19.3

47.1

650

20.0

53.1

860

18.8

48.9

Features

• Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,

860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input

• Exceptional Efficiency for Class AB Analog or Digital Television Operation

• Full Performance across Complete UHF TV Spectrum, 470--860 MHz

• Capable of 600 Watt CW Output Power with Adequate Thermal Management

• Integrated Input Matching

• Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V

− Improves Class C Performance, e.g. in a Doherty Peaking Stage

− Enables Fast, Easy and Complete Shutdown of the Amplifier

• Characterized from 20 V to 50 V for Extended Operating Range for use

with Drain Modulation

• Excellent Thermal Characteristics

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +130

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

--65 to +150

°C

Case Operating Temperature

150

°C

Derate above 25°C

1052

5.26

W

W/°C

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software &

Tools/Development Tools/Calculators to access MTTF calculators by product.

Document Number: MRFE6VP8600H

Rev. 1, 9/2011

Freescale Semiconductor

Technical Data

470--860 MHz, 600 W, 50 V

LDMOS BROADBAND

RF POWER TRANSISTORS

MRFE6VP8600HR6

MRFE6VP8600HR5

MRFE6VP8600HSR6

MRFE6VP8600HSR5

CASE 375D--05, STYLE 1

NI--1230

MRFE6VP8600HR6

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP8600HSR6

PARTS ARE PUSH--PULL

Figure 1. Pin Connections

(Top View)

Drain 1

31

42 Drain 2

Gate 1

Gate 2

Note: The backside of the package is the

source terminal for the transistor.

© Freescale Semiconductor, Inc., 2011. All rights reserved.