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STM32F407IE 데이터시트(PDF) 83 Page - STMicroelectronics |
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STM32F407IE 데이터시트(HTML) 83 Page - STMicroelectronics |
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83 / 180 page ![]() STM32F405xx, STM32F407xx Electrical characteristics Doc ID 022152 Rev 3 83/180 Figure 26. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) Table 24. Typical and maximum current consumptions in VBAT mode (1) Symbol Parameter Conditions Typ Max Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.8 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator and RTC ON 1.29 1.42 1.68 TBD(2) TBD(2) µA Backup SRAM OFF, low-speed oscillator and RTC ON 0.62 0.73 0.96 TBD(2) TBD(2) Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9(2) 16(2) Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5(2) 7(2) 1. TBD stands for “to be defined”. 2. Based on characterization, not tested in production. 0 0.5 1 1.5 2 2.5 3 3.5 0 102030405060708090 100 Temperature in (°C) 1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V |
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