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ADP3410 데이터시트(PDF) 8 Page - Analog Devices |
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ADP3410 데이터시트(HTML) 8 Page - Analog Devices |
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8 / 11 page ![]() REV. 0 ADP3410 –8– THEORY OF OPERATION The ADP3410 is a dual MOSFET driver optimized for driving two N-channel FETs in a synchronous buck converter topology. A single PWM input signal is all that is required to properly drive the high-side and the low-side FETs. Each driver is capable of driving a 3 nF load with only a 20 ns transition time. A more detailed description of the ADP3410 and its features follows. Refer to the functional block diagram. Low-Side Driver The low-side driver is designed to drive low-RDS(ON) N-channel MOSFETs. The maximum output resistance for the driver is 5 Ωs for both sourcing and sinking gate current. The low-output resistance allows the driver to have 20 ns rise and fall times into a 3 nF load. The bias to the low-side driver is internally con- nected to the VCC supply and PGND. When the driver is enabled, the driver’s output is 180 ° out of phase with the PWM input. When the driver is shut down or the entire ADP3410 is in shutdown or in under voltage lockout, the low-side gate is held low. High-Side Driver The high-side driver is designed to drive a floating low RDS(ON) N-channel MOSFET. The maximum output resistance for the driver is 5 Ωs for both sourcing and sinking gate current. The low output resistance allows the driver to have 20 ns rise and fall times into a 3 nF load. The bias voltage for the high-side driver is developed by an external bootstrap supply circuit, which is connected between the BST and SW pins. The bootstrap circuit comprises a Schottky diode, D1, and bootstrap capacitor, CBST. When the ADP3410 is starting up, the SW pin is at ground, so the bootstrap capacitor will charge up to VCC through D1. As the input voltage ramps up and exceeds the UVLO threshold, the high-side driver is enabled. When the PWM input goes high, the high-side driver will begin to turn the high-side FET, Q1, ON by pulling charge out of CBST. As Q1 turns ON, the SW pin will rise up to VBATT, forcing the BST pin to VBATT + VC(BST), which is enough gate- to-source voltage to hold Q1 ON. To complete the cycle, Q1 is switched OFF by pulling the gate down to the voltage at the SW pin. When the low-side FET, Q2, turns ON, the SW pin is pulled to ground. This allows the bootstrap capacitor to charge up to VCC again. The high-side driver’s output is in phase with the PWM input. When the driver is in under-voltage lockout, the high-side gate is held low. Overlap Protection Circuit The Overlap Protection Circuit (OPC) prevents both of the main power switches, Q1 and Q2, from being ON at the same time. This is done to prevent shoot-through currents from flowing through both power switches and the associated losses that can occur during their ON-OFF transitions. The overlap protection circuit accomplishes this by adaptively controlling the delay from Q1’s turn OFF to Q2’s turn ON, and by program- ming the delay from Q2’s turn OFF to Q1’s turn ON. To prevent the overlap of the gate drives during Q1’s turn OFF and Q2’s turn ON, the overlap circuit monitors the voltage at the SW pin. When the PWM input signal goes low, Q1 will begin to turn OFF (after a propagation delay), but before Q2 can turn ON, the overlap protection circuit waits for the voltage at the SW pin to fall from VBATT to 1 V. Once the voltage on the SW pin has fallen to 1 V, Q2 will begin turn ON. By waiting for the voltage on the SW pin to reach 1 V, the overlap protection circuit ensures that Q1 is OFF before Q2 turns on, regardless of variations in temperature, supply voltage, gate charge, and drive current. To prevent the overlap of the gate drives during Q2’s turn OFF and Q1’s turn ON, the overlap circuit provides a programmable delay that is set by a capacitor on the DLY pin. When the PWM input signal goes high, Q2 will begin to turn OFF (after a propa- gation delay), but before Q1 can turn ON, the overlap protection circuit waits for the voltage at DRVL to drop to around 10% of VCC. Once the voltage at DRVL has reached the 10% point, the overlap protection circuit will wait for a 20 ns typical propa- gation delay plus an additional delay based on the external capacitor, CDLY. The delay capacitor adds an additional 1 ns/pF of delay. Once the programmable delay period has expired, Q1 will begin turn ON. The delay allows time for current to com- mutate from the body diode of Q2 to an external Schottky diode, which allows turn-off losses to be reduced. Although not as foolproof as the adaptive delay, the programmable delay adds a safety margin to account for variations in size, gate charge, and internal delay of the external power MOSFETs. Overvoltage Protection An overvoltage protection circuit monitors the output voltage for an overvoltage condition. This condition is possible if Q1 should fail. If this should occur, the output voltage would begin to rise up to the battery voltage where it would pose the threat of damage to the devices connected to the output. By adding a resistor divider, Ra and Rb, to the OVPSET pin, the output voltage can be monitored for this fault condition. If the voltage on the OVPSET pin exceeds the 1.2 V threshold, this indicates a fault condition and Q1 is turned OFF and the low-side FET (synchronous rectifier) is turned ON. The power switches will remain in this state until the voltage on the OVPSET pin falls below 400 mV. The turn-on of Q2 is not delayed by monitoring the SW voltage, but the triggering of OVP is intentionally slow to avoid false triggering. Low-Side Driver Enable The low-side driver enable ( DRVLSD) allows external control of the synchronous rectifier. This is particularly useful for main- taining efficiency under light load conditions. At light loads, the PWM duty cycle becomes small, meaning the high-side switch is ON for a very short time and the synchronous rectifier is ON for the remainder of the period. Under these conditions, the induc- tor current ramps up during the short high-side switch ON time, and then ramps down during the synchronous rectifier’s ON time. If the inductor current reaches zero and there is still time left in the period, the inductor current will begin to go negative. Negative current indicates that current is being drawn out of the output capacitor through the inductor and low-side FET to ground, incurring extra losses in the process. If the DRVLSD is used to shut down the low-side driver when the inductor current reaches zero, the light load efficiency can be dramatically improved. If inductor current information is not available, but a microprocessor is performing a power management function, it can shut down the synchronous rectifier when in a sleep or stand-by mode. When the DRVLSD input is low, the low-side driver output goes low. When the DRVLSD input is high the low-side driver is enabled and controlled by the PWM input. The propagation |
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