2STL2580 datasheet(4/14 Pages) STMICROELECTRONICS

부품명	2STL2580

상세설명	High voltage fast switching NPN power transistor

PDF	14 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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4 / 14 page

Electrical characteristics

2STL2580

4/14

Doc ID 18292 Rev 3

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 800 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 8 V

100

µA

V(BR)CEO

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

400

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

hFE

(1)

DC current gain

IC = 250 mA

VCE = 5 V

100

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 1 A

IB = 0.2 A

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 0.2 A

1.1

Resistive load

Rise time

Storage time

Fall time

VCC=200 V, IC=0.3 A

IB1=20 mA, IB2=-50 mA

Tp=30 µs

140

µs

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