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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HT45F4M 데이터시트(PDF) 57 Page - Holtek Semiconductor Inc |
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HT45F4M 데이터시트(HTML) 57 Page - Holtek Semiconductor Inc |
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57 / 138 page  Rev. 1.10 �6 �an�a�� 1�� �01� Rev. 1.10 �7 �an�a�� 1�� �01� HT45F4M Lithium Battery Backup Power ASSP MCU HT45F4M Lithium Battery Backup Power ASSP MCU Programming Considerations TheTMCounterRegisters,theCapture/CompareCCRAregistersandtheTM1CCRPregisters, beingeither16-bitor10-bit,allhavealowandhighbytestructure.Thehighbytescanbedirectly accessed,butasthelowbytescanonlybeaccessedviaaninternal8-bitbuffer,readingorwriting totheseregisterpairsmustbecarriedoutinaspecificway.Theimportantpointtonoteisthat datatransfertoandfromthe8-bitbufferanditsrelatedlowbyteonlytakesplacewhenawrite orreadoperationtoitscorrespondinghighbyteisexecuted.AstheCCRAandCCRPregisters areimplementedinthewayshowninthefollowingdiagramandaccessingtheseregisterpairsis carriedoutinaspecificwaydescribedabove,itisrecommendedtousethe“MOV”instructionto accesstheCCRAorCCRPlowbyteregisters,namedTMxALorTMxRPL,usingthefollowing accessprocedures.AccessingtheCCRAorCCRPlowbyteregisterwithoutfollowingtheseaccess procedureswillresultinunpredictablevalues. TM C ount er R eg is te r (R ead on ly ) TM xD L TM xD H TM xA L TM xA H 8- bi t Bu ff er TM C CR A Re gi st er ( R ead/ W ri te ) Da ta Bu s TM xR PL TM xR PH TM C CR P Re gi st er ( R ead/ W ri te ) Thefollowingstepsshowthereadandwriteprocedures: • WritingDatatoCCRAorCCRP ♦ Step1.WritedatatoLowByteTMxALorTMxRPL –notethatheredataisonlywrittentothe8-bitbuffer. ♦ Step2.WritedatatoHighByteTMxAHorTMxRPH –heredataiswrittendirectlytothehighbyteregistersandsimultaneouslydataislatchedfrom the8-bitbuffertotheLowByteregisters. • ReadingDatafromtheCounterRegistersandCCRAorCCRP ♦ Step1.ReaddatafromtheHighByteTMxDH,TMxAHorTMxRPH –heredataisreaddirectlyfromtheHighByteregistersandsimultaneouslydataislatched fromtheLowByteregisterintothe8-bitbuffer. ♦ Step2.ReaddatafromtheLowByteTMxDL,TMxALorTMxRPL –thisstepreadsdatafromthe8-bitbuffer. |
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