M95128-RMB6TG datasheet(35/49 Pages) STMICROELECTRONICS

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M95128-W M95128-R M95128-DF

DC and AC parameters

Doc ID 5798 Rev 16

35/49

Table 17.

DC characteristics (M95128-R, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 10 and Table 12(1)

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

± 2

µA

ILO

Output leakage

current

S = VCC, voltage applied on Q = VSS or VCC

± 2

µA

ICC

Supply current

(Read)

VCC = 1.8V, C = 0.1VCC or 0.9 VCC,

at 2 MHz, Q = open

1(2)

VCC = 1.8V, C = 0.1VCC or 0.9 VCC,

at 5 MHz, Q = open

2(3)

ICC0

(4)

Supply current

(Write)

VCC = 1.8 V, during tW, S = VCC

3mA

ICC1

Supply current

(Standby)

VCC = 1.8 V, S = VCC, VIN = VSS or VCC

1(5)

µA

VIL

Input low voltage

1.8 V

≤VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

1.8 V

≤VCC < 2.5 V

0.75 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V

0.3

Output high voltage

IOH = –0.1 mA, VCC = 1.8 V

0.8 VCC

If the application uses the M95128-R device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C, please refer to Table 16:

DC characteristics (M95128-W, device grade 6), rather than to the above table.

Value tested only for previous M95128 devices identified by process letter A.

Only for M95128 devices identified by process letter K.

Characterized only, not tested in production.

3 µA for previous M95128 devices identified by process letter A.

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