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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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JS28F256P30B95A 데이터시트(PDF) 59 Page - Micron Technology |
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JS28F256P30B95A 데이터시트(HTML) 59 Page - Micron Technology |
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59 / 97 page  August 2008 Datasheet Order Number: 306666-12 59 P30 R301 tAVCH/L Address setup to CLK 9 - ns 1 R302 tVLCH/L ADV# low setup to CLK 9 - ns R303 tELCH/L CE# low setup to CLK 9 - ns R304 tCHQV / tCLQV CLK to output valid - 17 ns R305 tCHQX Output hold from CLK 3 - ns 1,7 R306 tCHAX Address hold from CLK 10 - ns 1,4,7 R307 tCHTV CLK to WAIT valid - 17 ns 1,7 R311 tCHVL CLK Valid to ADV# Setup 3 - ns 1 R312 tCHTX WAIT Hold from CLK 3 - ns 1,7 Notes: 1. See Figure 18, “AC Input/Output Reference Waveform” on page 55 for timing measurements and max allowable input slew rate. 2. OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to tELQV. 3. Sampled, not 100% tested. 4. Address hold in synchronous burst mode is tCHAX or tVHAX, whichever timing specification is satisfied first. 5. Please see the latest P30 Spec Update for synchronous burst operation with the TSOP package. 6. Synchronous read mode is not supported with TTL level inputs. 7. Applies only to subsequent synchronous reads. Table 31: AC Read Specifications for 256/512-Mbit Densities (Sheet 3 of 3) Num Symbol Parameter Speed Min Max Unit Notes Table 32: AC Read Specification differences for 65nm Num Symbol Parameter Min Max Unit Notes Asynchronous Specifications R1 tAVAV Read cycle time 100 - ns 2 TSOP 110 ns 2 R2 tAVQV Address to output valid - 100 ns 2 TSOP 110 ns 2 R3 tELQV CE# low to output valid - 100 ns 2 TSOP 110 ns 2 R103 tVLQV ADV# low to output valid - 100 ns 1,2 TSOP 110 ns 2 Notes: 1. See Figure 18, “AC Input/Output Reference Waveform” on page 55 for timing measurements and max allowable input slew rate. 2. This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that will use the 65nm lithography. |
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