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PD70F3559 데이터시트(PDF) 74 Page - Renesas Technology Corp |
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PD70F3559 데이터시트(HTML) 74 Page - Renesas Technology Corp |
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74 / 85 page ![]() 74 R01DS0142ED0100 Data Sheet Chapter 8 Memory specification Chapter 8 Memory specification 8.1 Code flash specification Table 8-1 Code flash 8.2 Data flash specification Table 8-2 Data flash 8.3 Serial write operation specification Serial write operation Parameter Symbol Condition Ratings Unit Min Typ Max Number of Re-Writesa a) Please contact RENESAS sales office regarding specification other than the above. CWRT Data retention 20 years - - 100 times Programming Temperature tPRG (A) grade products -40 - 85 °C (A1) grade products -40 - 110 °C Parameter Symbol Condition Ratings Unit Min Typ Max Number of Re-Writesa a) Please contact RENESAS sales office regarding specification other than the above. DWRT1 Data retention 20 years - - 1000 times DWRT2 Data retention 15 years - - 5000 times DWRT3 Data retention 5 years - - 15000 times Programming Temperature tPRG (A) grade products -40 - 85 °C (A1) grade products -40 - 110 °C Parameter Symbol Condition Ratings Unit Min Typ Max FLMD0 setup time tDR 1 - - ms RESET release tPR 2 - - ms FLMD0 pulse input start tRP - 100 - ms FLMD0 low/high level width tPW 10 - 100 µs FLMD0 raise time tR - - 20 ns FLMD0 fall time tF - - 20 ns Programming time per 128 bit - - 50 µs Erase time per 4KB - - 54 ms |
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